双阈值耦合AlGaN/GaN HEMT中用于优化Ka波段高电场线性度的多指漏极板研究Investigation of multi-fingers drain field plate in dual-threshold coupling AlGaN/GaN HEMTs for optimizing linearity at high electrical field in Ka-bands王鹏飞西安电子科技大学Wang PengfeiXidian University
电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
Scalable nonlinear RF modeling of GaN HEMTs with industry standard ASM-HEMT compact modelSourabh KHANDELWAL澳大利亚麦考瑞大学教授Sourabh KHANDELWALProfessor of Macquarie University, Australia
无等离子体损伤GaN HEMT极化隔离的设计与优化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴贻钧中国科学院宁波材料技术与工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
功率HEMT的p-GaN栅极可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs钟耀宗中国科学院苏州纳米技术与纳米仿生研究所助理研究员ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
AlGaN/GaN HEMT能带工程和界面调制AlGaN/GaN HEMT energy band engineering and interface modulation胡卫国中国科学院北京纳米能源与系统研究所研究员HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
p-GaN Gate HEMT器件阈值稳定性及其机理Study of the Physics of Vth Instability of p-GaN Gate HEMT陈匡黎电子科技大学博士ZHOU QiProfessor of University of Electronic Science and Technology of China
GaN HEMT与SIC MOSFET在户用储能PCS方向应用优势Advantages in household energy storage PCS using GaN HEMT and SiC MOSFET https://fanyi.baidu.com/?aldtype=85孔令涛--南京芯干线科技有限公司市场总监
用于高效能量转换应用的GaN HEMT的深能级效应和可靠性Deep level effects and reliability of GaN HEMTs for high efficiency energy conversion applicationsEnrico Zanoni意大利帕多瓦大学信息工程系教授Enrico ZanoniProfessor of Dipartimento di Ingegneria dellInformazioneUniversit di Padova
