实现超小型全氮化微型LED的纳米级材料科学Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科学院及工程院两院院士、中国科学院外籍院士、瑞典德隆大学教授、南方科技大学讲席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，Foreign Member of the Chinese Academy of Sciences, Professor of Lund Univer

基于大失配外延的氮化物第三代半导体材料与器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大学理学部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

半导体材料产业的现状和挑战Status and Challenge of Semiconductor Material Industry杨德仁中国科学院院士、浙大宁波理工学院校长、浙江大学硅及先进半导体材料全国重点实验室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

基于纳米压印全生态产业平台的微纳光学器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform罗刚材料科学姑苏实验室研究员、苏州新维度微纳科技有限公司创始人LUO GangProfessor of Gusu Lab, Founderof NDnano

GaN基光电材料外延与MOCVD反应腔结构关联性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中国科学院半导体研究所副研究员、中科重仪半导体联合创始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅衬底GaN基光电材料外延生长Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孙钱中国科学院苏州纳米技术与纳米仿生研究所研究员SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化铝基半导体材料及器件的最新进展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基础研究实验室负责人、资深杰出研究员Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氮化铝单晶材料研究进展与应用展望Research Progress and Application Prospect of AlN Single Crystal Materials程红娟中国电子科技集团第四十六所新材料研发中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

第四代半导体材料平坦化研究进展Research Progress on Planarization of Fourth Generation Semiconductor Materials赵志强北京艾姆希半导体科技有限公司销售总监ZHAO ZhiqiangSales Director of MCF Technologies Ltd.

氧化镓材料和电子器件的热特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孙华锐哈尔滨工业大学（深圳）教授，理学院副院长SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen

电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

无等离子体损伤GaN HEMT极化隔离的设计与优化Design and optimization of polarization isolation toward plasma-damage-free GaN HEMT戴贻钧中国科学院宁波材料技术与工程研究所DAI YiyunNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

全色显示材料与3D芯片集成技术Integrated technology of panchromatic display materials and 3D chips范谦东南大学下一代半导体材料研究所研究员

基于HfZrO2与b-Ga2O3异质结的高性能自驱动日盲紫外光探测器P-Type SnO2 Fabrication and Construction of SnO2 Homojunction UV Photodetector黎明锴湖北大学材料科学与工程学院教授LIMingkaiProfessor of Hubei University

微米级氧化镓厚膜的载流子定向输运与深紫外光电探测Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection张文瑞中科院宁波材料所研究员Zhang WenruiProfessor Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

新型宽禁带压电半导体材料-Ga2O3及其在射频谐振器中的应用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王钢中山大学佛山研究院院长，中山大学半导体照明材料及器件国家地方联合工程实验室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor

背光模组中Mini LED对封装材料的要求与挑战Requirements and Challenges for Packaging Materials for Mini LEDs used in Backlight Modules徐建军北京康美特科技股份有限公司首席技术官Jianjun XUCTO of Beijing KMT Technology Co., Ltd.

用于先进SiC功率模块的整体解决（核心设备/材料/工程）方案Overall solution (core equipment/materials/engineering) for advanced SiC power module周鑫苏州博湃半导体技术有限公司市场销售总监ZHOU XinDirector of Sales Marketing, Suzhou Bopai Semiconductor Technology Co., Ltd.

高性能GaN-on-GaN材料与器件的外延生长High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王国斌江苏第三代半导体研究院研发部负责人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors

平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS