基于大失配外延的氮化物第三代半导体材料与器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大学理学部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

大直径碳化硅外延市场发展与挑战Development and Challenges of Large Diameter Silicon Carbide Epitaxial张国良河北普兴电子科技股份有限公司市场总监ZHANG GuoliangMarketing Director of Hebei Pushing Electronic Technology Co., LTD

化合物半导体外延大规模量产解决方案High Volume Manufacturing of Compound Semiconductors Epitaxy方子文AIXTRON中国总经理FANG ZiwenGM of AIXTRON China

GaN基光电材料外延与MOCVD反应腔结构关联性研究Research on the Correlation Between GaN-based Optoelectronic Material Epitaxy and MOCVD Reactor Chamber Structure姚威振中国科学院半导体研究所副研究员、中科重仪半导体联合创始人YAO WeizhenAssociate Professor of Institute of Semiconductors, Chinese Academy of Sciences, Co-founder of CASInstruments Semiconductor Co., Ltd.

硅衬底GaN基光电材料外延生长Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孙钱中国科学院苏州纳米技术与纳米仿生研究所研究员SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

等离子体辅助分子束外延生长AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy刘欢南京大学LIU HuanNanjing University

用于氮化镓异质外延的高温PVD氮化铝缓冲层技术High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

6英寸复合衬底上厚GaN外延生长研究Growth of Thick GaN Epilayers on 150mm Engineered Substrate韩颖中国电子科技集团第十三所高级工程师HAN YingSenior Engineer of Hebei Semiconductor Research Institute

基于量产的氮化镓基光电子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA苏州思体尔软件科技有限公司总经理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

氧化镓PECVD外延生长及光电信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京邮电大学副教授、苏州镓和半导体研发总监LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.

氮化物的范德华外延：基底结构、多性能控制和紫外光电器件应用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孙晓娟中科院长春光机所研究员SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

MPCVD法金刚石同质外延生长及MOS器件技术Homogeneous epitaxial diamond growth by MPCVD and its MOS device technology张金风西安电子科技大学教授ZHANG JinfengProfessor of Xidian University

MgO（100）上生长柱状纳米晶b-Ga2O3外延薄膜及其高灵敏度日盲探测器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大学教授HE YunbinProfessor of Hubei University

面向柔性和垂直电子器件的外延氧化镓薄膜Epitaxial Ga2O3 thin film membrane for flexible and vertical electronics李晓航沙特阿卜杜拉国王科技大学副教授（陆义代讲）LI XiaohangAssociate Professor at King Abdullah University of ScienceTechnology

高性能GaN-on-GaN材料与器件的外延生长High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王国斌江苏第三代半导体研究院研发部负责人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors

无损表征氮化镓外延热物性的瞬态热反射技术Transient thermoreflectance technique for non-invasively characterizing the thermal properties of GaN epitaxial wafer袁超武汉大学工业科学研究院研究员YUAN ChaoProfessor of The Institute of Technological Sciences, Wuhan University

AlGaN基低维量子结构外延和电导率调控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures许福军北京大学物理学院副教授Xu Fujun - Associate Professor, Peking University

PVT法同质外延AlN生长和p型掺杂面临的挑战Challenges on homoepitaxial AlN growth and p-type doping by the PVT method王琦琨奥趋光电技术（杭州）有限公司研发总监（CTO）

利用AlN传导层在GaN衬底上外延生长金刚石薄膜及其热传输特性Thermal dissipation from GaN to diamond with AlN conduction layer桑立雯日本国立物质材料研究所独立研究员SANG LiwenIndependent Scientist of National Institute for Materials Science (NIMS), Japan

平片蓝宝石衬底上高质量AlN材料MOCVD外延生长High quality AlN growth on flat sapphire at relative low temperature by MOCVD赵德刚中国科学院半导体所研究员ZHAO DegangProfesor of Institute of Semiconductors, CAS