高功率宽禁带半导体射频器件研究进展Research Progress of High Power Wide Band-gap Semiconductor RF Devices张进成西安电子科技大学副校长、教授ZHANG JinchengVice PresidentProfessor of Xidian University
用于病毒灭活的蓝宝石生长230nm远紫外光功率模组的开发研究Development of 230 nm Far-UVC LED Power Module Grown on c-Sapphire for Human Harmless Virus Inactivation平山秀樹日本理化研究所平山量子光素子研究室主任Hideki HIRAYAMAProfessor ofRIkagaku KENkyusho Institute of Physical and Chemical Research(RIKEN),Japan
基于量产的氮化镓基光电子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA苏州思体尔软件科技有限公司总经理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.
面向的Ga2O3功率器件应用:封装、鲁棒性和多维器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices张宇昊弗吉尼亚理工大学电力电子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech
电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
47GHz-52GHz功率放大器芯片套片设计Design of 47GHz-52GHz Power Amplifier Chipset 杜鹏搏中国电科十三所正高级工程师、河北新华北集成电路有限公司副总经理DUPengboSenior Engineer of Hebei Semiconductor Institute, Deputy General Manager of Hebei New North China Integrated Circuit Co., Ltd
功率HEMT的p-GaN栅极可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs钟耀宗中国科学院苏州纳米技术与纳米仿生研究所助理研究员ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
中高压(1-10 kV)氮化镓功率器件新进展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices张宇昊美国弗吉尼亚理工大学助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University
基于SiC功率芯片的高功率密度电驱系统High power density electric drive system based on SiC power chip刘朝辉国家新能源汽车技术创新中心总师LIU ChaohuiChief Engineer of National New Energy Automobile Technology Innovation Center
Condura.ultraTM无银AMB氮化硅基板---车规级功率模块用高性价比解决方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module张靖贺利氏电子中国区研发总监ZHANG JingDirector of Innovation China, Heraeus Electronics