• 材料科学姑苏实验室研
    基于纳米压印全生态产业平台的微纳光学器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform罗刚材料科学姑苏实验室研究员、苏州新维度微纳科技有限公司创始人LUO GangProfessor of Gusu Lab, Founderof NDnano
    58000
    SSLCHINA2025-01-09 15:17
  • 中科院长春光机所研究
    Micro-led研究进展及在光医疗领域的应用展望The Research Progress of Micro-led and its Application Prospect in the Field of Optical Medicine吕金光中国科学院长春光学精密机械与物理研究所研究员LV JinguangProfessorof Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
    57700
    SSLCHINA2025-01-09 14:47
  • 崔锦江研究员:光学技
    光学技术糖足微循环监测与干预应用研究Application of Optical Technology in Monitoring and Intervention of Glucose Microcirculation崔锦江中国科学院苏州生物医学工程技术研究所康复与治疗研究室主任、研究员CUI JinjiangDirector and Professor Rehabilitation and Treatment Laboratory, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences
    55500
    SSLCHINA2025-01-09 14:44
  • 中科院苏州纳米所研究
    硅衬底GaN基光电材料外延生长Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孙钱中国科学院苏州纳米技术与纳米仿生研究所研究员SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
    57800
    IFWS2025-01-09 14:41
  • 中国科学院苏州纳米所
    氨热法氮化镓单晶生长研究进展及面临的挑战Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任国强中国科学院苏州纳米技术与纳米仿生研究所、研究员REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
    44400
    IFWS2025-01-09 14:24
  • 皇家墨尔本大学微纳研
    基于液态金属打印和飞秒激光照射的高性能原子薄Ga2O3气体传感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龙皇家墨尔本大学微纳研究院研究员XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University
    44400
    IFWS2025-01-09 13:57
  • 山东大学新一代半导体
    电流/功率截止频率为135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鹏山东大学新一代半导体材料研究院研究员CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University
    111100
    guansheng2023-05-22 15:20
  • 中科院苏州纳米所助理
    功率HEMT的p-GaN栅极可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs钟耀宗中国科学院苏州纳米技术与纳米仿生研究所助理研究员ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
    77000
    guansheng2023-05-22 15:12
  • 中国科学院北京纳米能
    AlGaN/GaN HEMT能带工程和界面调制AlGaN/GaN HEMT energy band engineering and interface modulation胡卫国中国科学院北京纳米能源与系统研究所研究员HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
    105900
    guansheng2023-05-22 15:02
  • 甬江实验室研究员王文
    异质集成氮化镓功率模块的量产制造工艺研究A Fabrication Process for Heterogeneous Integrated GaN Power Modules王文博甬江实验室研究员WANG WenboProfessor of Yongjiang Laboratory (Y-Lab)
    156000
    guansheng2023-05-22 14:29
  • 东南大学下一代半导体
    全色显示材料与3D芯片集成技术Integrated technology of panchromatic display materials and 3D chips范谦东南大学下一代半导体材料研究所研究员
    61600
    guansheng2023-05-22 14:10
  • 武汉大学研究员张召富
    4H-SiC MOSFET中界面碳团簇的形成和迁移率退化机理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs张召富武汉大学工业科学研究院研究员ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University
    63600
    guansheng2023-05-22 13:56
  • 复旦大学副研究员雷光
    比电阻3.3毫欧.平方厘米的1200伏14毫欧SiC MOSFET1200V 14mohm SiC MOSFET with Rsp,on of 3.3mohm.cm^2雷光寅复旦大学副研究员LEI GuangyinAssociate Professor of Fudan University
    91100
    guansheng2023-05-22 13:50
  • 浙江大学特聘研究员
    1200V SiC MOSFET抗辐射可靠性研究Investigation of 1200V SiC MOSFET Radiation Ruggedness任娜浙江大学特聘研究员REN NaProfessor of Zhejiang University
    80700
    guansheng2023-05-22 13:48
  • 中国科学院心理研究所
    光健康与近视防护黄昌兵中国科学院心理研究所研究员HUANGChangbingProfessor of InstituteofPsychology,CAS
    89400
    guansheng2023-05-22 10:38
  • 中国科学院苏州纳米所
    氮化镓基激光器和超辐射管研究进展Progress of GaN based laser diodes and superluminescene diodes刘建平中国科学院苏州纳米技术与纳米仿生研究所纳米器件研究部 研究员LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences
    99700
    guansheng2023-05-22 10:07
  • 波兰高压物理研究所研
    基于蓝光半导体激光器的新器件:SWOT分析New devices based on blue laser diodes: SWOT analysis.Mike LESZCZYNSKI波兰高压物理研究所研究员Mike LESZCZYNSKIProfessor of Institute of High Pressure Physics, Poland
    55500
    guansheng2023-05-22 09:56
  • 中科院宁波材料所研究
    微米级氧化镓厚膜的载流子定向输运与深紫外光电探测Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection张文瑞中科院宁波材料所研究员Zhang WenruiProfessor Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences
    93900
    guansheng2023-05-19 15:02
  • 中科院长春光机所研究
    氮化物的范德华外延:基底结构、多性能控制和紫外光电器件应用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孙晓娟中科院长春光机所研究员SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
    119600
    guansheng2023-05-19 14:58
  • 中国科学院半导体所研
    超宽禁带六方氮化硼二维原子晶体及其光电器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices张兴旺中国科学院半导体所研究员ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences
    127500
    guansheng2023-05-19 14:21
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