AlGaN/GaN HEMT能带工程和界面调制AlGaN/GaN HEMT energy band engineering and interface modulation胡卫国中国科学院北京纳米能源与系统研究所研究员HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences
4H-SiC MOSFET中界面碳团簇的形成和迁移率退化机理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs张召富武汉大学工业科学研究院研究员ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University
