面向SiC功率器件的装备与工艺解决方案NAURA Solutions for SiC Power Devices张轶铭北京北方华创微电子装备有限公司Zhang YimingBeijing NAURA Microelectronics Equipment Co.,Ltd

AlN基高压高频功率器件研究进展及挑战Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安电子科技大学教授ZHOUHongProfessor at Xidian University

基于量产的氮化镓基光电子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA苏州思体尔软件科技有限公司总经理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

轨道交通SiC功率器件研究与应用进展刘国友株洲中车时代电气股份有限公司中车科学家、功率半导体与集成技术全国重点实验室副主任

面向的Ga2O3功率器件应用：封装、鲁棒性和多维器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices张宇昊弗吉尼亚理工大学电力电子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

中高压（1-10 kV）氮化镓功率器件新进展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices张宇昊美国弗吉尼亚理工大学助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University

后快充时代的氮化镓功率器件产业化GaN Power Devices Beyond Adapter Applications王荣华润新微电子（大连）有限公司副总经理WANG RonghuaVice General Manager of Runxin Microelectronics

氮化镓功率器件耐压理论与电场均匀化技术研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices刘建华南京邮电大学博士

车载微芯片（MCU）应用失效案例分析研究李玉清星宇研究院功率器件工程师LI YuqingXINGYU Co.,Ltd

SiC等离子体波脉冲功率器件与应用研究Research on 4H-SiC Plasma Wave Pulsed Power Devices and its Applications孙乐嘉西安电子科技大学副教授SUN LejiaAssociate Professor of Xidian University

面向功率器件的高性能AlN陶瓷基板High Performance AlN Ceramic Substrate for Power Devices梁超江苏博睿光电股份有限公司副总经理LIANG ChaoDeputy General Manager of Jiangsu Bree Optronics Co., Ltd

SiC功率器件制造装备技术及发展趋势Technology and development trends of SiC power devices manufacturing equipment巩小亮中国电子科技集团公司第四十八研究所、半导体装备研究部主任Xiaoliang GONGDirector of Semiconductor equipment research department, The 48th Research Institute of China Electronics Technology Group Corporation

金刚石微波功率器件进展Progress in Diamond Microwave Power Devices冯志红中国电科首席科学家、中国电科13所研究员、专用集成电路国家级重点实验室常务副主任FENG ZhihongHebei Semiconductor Research lnstitute

氧化镓功率器件耐压和功率优值的研究Research on Voltage Withstandand Power Optimum Value of Ga2O3 Power Devices张进成西安电子科技大学副校长、教授（团队代讲）

GaN/SiC功率器件在航天电源的应用前景Application prospect of GaN/SiC power devices in aerospace power supply万成安北京卫星制造厂有限公司领域总师WAN Chengan Field Chief Engineer of Beijing Satellite Manufacturing Factory Co., Ltd

SiC功率器件在光伏逆变器中的应用进展Application progress of SiC power devices in photovoltaic inverters刘保颂锦浪科技技术研究中心总监LIU Baosong Technical director of Ginlong Technologies co.,ltd

碳化硅及氮化镓功率器件在数据中心AC-DC电源上的应用及展望The application and prospect of wide band gap devices in AC-DC power supply in data center董慨台达电子高阶客制电源事业部中国区总监Dong KaiRD Director of CDBU, Delta Electronics

先进封装大板扇出研发及功率器件封装应用The Research on Panel Level Fan Out Package and its Application on Power Electronics林挺宇广东佛智芯微电子技术研究有限公司副总经理，广东省半导体智能装备与系统集成创新中心首席科学家Tingyu LINDeputy General Manager of Guangdong FZX Microelectronics Technology Co. Ltd, Principal Scientist of CNC Equipment Cooperative Innovation Institute

SiC功率器件制造工艺特点与核心装备创新进展Manufacturing process characteristics and key equipment development of SiC power devices巩小亮中国电子科技集团公司第四十八研究所 半导体装备研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation

美国国家工程院院士、美国加利福尼亚大学杰出教授、Transphorm 的联合创始人Umesh K. MISHRA的高足吴毅锋博士，分享了功率器件之争：宽禁带vs硅的发展动态。 吴毅锋表示宽禁带技术对于电力、能源节约具有非常重要的意义。我们需要继续发展功率元件，该领域的市场潜力非常大，对于功率器件而言，可靠性至关重要。结合目前的发展情况，对于硅、碳化硅和硅基氮化镓来说，硅基氮化镓能力性可能更强。硅是目前功率元件中最成功的，已经