实现超小型全氮化微型LED的纳米级材料科学Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科学院及工程院两院院士、中国科学院外籍院士、瑞典德隆大学教授、南方科技大学讲席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，Foreign Member of the Chinese Academy of Sciences, Professor of Lund Univer

半导体材料产业的现状和挑战Status and Challenge of Semiconductor Material Industry杨德仁中国科学院院士、浙大宁波理工学院校长、浙江大学硅及先进半导体材料全国重点实验室主任、教授YANG DerenAcademician of Chinese Academy of Sciences,President of NingboTech University, Professor and Director of State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University

基于纳米压印全生态产业平台的微纳光学器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform罗刚材料科学姑苏实验室研究员、苏州新维度微纳科技有限公司创始人LUO GangProfessor of Gusu Lab, Founderof NDnano

显示用Micro-LED芯片与集成技术新进展New Progress of Micro-LED Chip and Integration Technology for Display黄凯厦门大学物理科学与技术学院副院长、教授HUANG KaiDeputy DeanProfessor of College of Physical Science and Technology, Xiamen University

氨热法氮化镓单晶生长研究进展及面临的挑战Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任国强中国科学院苏州纳米技术与纳米仿生研究所、研究员REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

轨道交通SiC功率器件研究与应用进展刘国友株洲中车时代电气股份有限公司中车科学家、功率半导体与集成技术全国重点实验室副主任

超宽禁带半导体氧化镓和氮化铝特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN张道华深圳平湖实验室第四代半导体首席科学家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

AlGaN/GaN HEMT能带工程和界面调制AlGaN/GaN HEMT energy band engineering and interface modulation胡卫国中国科学院北京纳米能源与系统研究所研究员HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences

基于光响应聚合物的Micro-LED可编程巨量组装技术研究进展Research Progress of the Micro-LED Programmable Massive Assembly Technology Based on Photoresponsive Polymers龚政广东省科学院半导体研究所教授，新型显示团队负责人Gong ZhengProfessor of the Institute of Semiconductors, Guangdong Academy of Sciences, Head of the Frontier Display Technology Team

高品质磷化铟衬底对激光器性能影响研究Effect of High Quality InP Substrate on Laser Performance惠峰云南锗业公司首席科学家、云南鑫耀半导体材料有限公司总经理HUI FengChief Scientist of Yunan Germanium Co.,ltd

光健康与近视防护黄昌兵中国科学院心理研究所研究员HUANGChangbingProfessor of InstituteofPsychology,CAS

氮化镓基激光器和超辐射管研究进展Progress of GaN based laser diodes and superluminescene diodes刘建平中国科学院苏州纳米技术与纳米仿生研究所纳米器件研究部 研究员LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences

基于HfZrO2与b-Ga2O3异质结的高性能自驱动日盲紫外光探测器P-Type SnO2 Fabrication and Construction of SnO2 Homojunction UV Photodetector黎明锴湖北大学材料科学与工程学院教授LIMingkaiProfessor of Hubei University

室温紫外GaN微盘激光器Room-Temperature Ultraviolet GaN Microdisk Lasers司志伟中国科学院苏州纳米技术与纳米仿生研究所SI ZhiweiSuzhou Institute of Nano-tech and Nano-bionics, CAS

Ga2O3/GaN异质结构紫外光电探测器Ga2O3/GaN Heterostructure Ultraviolet Photodetectors黄凯厦门大学物理科学与技术学院副院长、教授HUANG KaiProfessor, School of Physical Science and Technology, Xiamen University

基于表面电位的-Ga2O3功率MOSFET紧凑模型A Surface Potential Based Compact Model for -Ga2O3 Power MOSFETs周凯中国科学技术大学ZHOU KaiChina University of Science and Technology

金刚石微波功率器件进展Progress in Diamond Microwave Power Devices冯志红中国电科首席科学家、中国电科13所研究员、专用集成电路国家级重点实验室常务副主任FENG ZhihongHebei Semiconductor Research lnstitute

超宽禁带六方氮化硼二维原子晶体及其光电器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices张兴旺中国科学院半导体所研究员ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences

利用泵浦-探测瞬态反射显微技术测定立方砷化硼的高双极性迁移率High Ambipolar Mobility in Cubic Boron Arsenide（BAs）Revealed by Transient Reflectivity Microscopy刘新风国家纳米科学中心研究员,中科院纳米标准与检测重点实验室副主任LIU XinfengProfessor of National Nanoscience Center, Deputy director of the Key Laboratory of Standardizaiton and Characteriaziton of the Chinese Academy of Sciences

6G可见光通信Visible Light Communication Toward 6G迟楠复旦大学电子科学技术学院院长、教授CHI NanDean of School of Electronic Science and Technology