实现超小型全氮化微型LED的纳米级材料科学Nanometer-scale Materials Science Enabling Ultra-small All-Nitride Micro-LEDsLarsSAMUELSON瑞典皇家科学院及工程院两院院士、中国科学院外籍院士、瑞典德隆大学教授、南方科技大学讲席教授LarsSamuelsonMember of Royal Swedish Academy of Engineering, Member of Royal Swedish Academy of Sciences，Foreign Member of the Chinese Academy of Sciences, Professor of Lund Univer

基于大失配外延的氮化物第三代半导体材料与器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大学理学部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

用于氮化镓异质外延的高温PVD氮化铝缓冲层技术High Temperature PVD AlN e Buffer Layer Technology for GaN Heteroepitaxy

氮化铝基半导体材料及器件的最新进展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基础研究实验室负责人、资深杰出研究员Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

氨热法氮化镓单晶生长研究进展及面临的挑战Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任国强中国科学院苏州纳米技术与纳米仿生研究所、研究员REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氮化铝单晶材料研究进展与应用展望Research Progress and Application Prospect of AlN Single Crystal Materials程红娟中国电子科技集团第四十六所新材料研发中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

基于量产的氮化镓基光电子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA苏州思体尔软件科技有限公司总经理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

超宽禁带半导体氧化镓和氮化铝特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN张道华深圳平湖实验室第四代半导体首席科学家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

28GHz氮化镓基时间调制波束成形系统28GHz GaN based time modulated beamforming system黄同德南京理工大学副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology

氮化镓推动5G、射频能源及其他领域的创新GaN Driving innovation in 5G, RF Energy and beyond裴轶苏州能讯高能半导体有限公司副总裁PEI YiVice President of Dynax Semiconductor, Inc

中高压（1-10 kV）氮化镓功率器件新进展New Progress in Medium and High Voltage (1-10 kV) GaN Power Devices张宇昊美国弗吉尼亚理工大学助理教授ZHANG Yuhao Assistant Professor, Virginia Tech University

后快充时代的氮化镓功率器件产业化GaN Power Devices Beyond Adapter Applications王荣华润新微电子（大连）有限公司副总经理WANG RonghuaVice General Manager of Runxin Microelectronics

氮化镓功率器件耐压理论与电场均匀化技术研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices刘建华南京邮电大学博士

氮化镓在新能源智能汽车的应用探索与实践Research of InnoGaN in New-energy Intelligent?Vehicle Applications孟无忌英诺赛科产品应用主任工程师Eric MENGChief Engineer of Product Application for Innoscience

异质集成氮化镓功率模块的量产制造工艺研究A Fabrication Process for Heterogeneous Integrated GaN Power Modules王文博甬江实验室研究员WANG WenboProfessor of Yongjiang Laboratory (Y-Lab)

面向AR微显示应用的超小尺寸氮化物Micro-LED研究Study on ultra-small III-nitride Micro-LEDs for AR applications汪莱清华大学信息电子工程系光电子研究所所长WANG LaiInstitute of Information Optoelectronic Technology, Department of Electronic Engineering, Tsinghua University

Condura.ultraTM无银AMB氮化硅基板---车规级功率模块用高性价比解决方案Condura.ultraTM silver free AMB --- cost-effective solution for automotive power module张靖贺利氏电子中国区研发总监ZHANG JingDirector of Innovation China, Heraeus Electronics

氮化镓基激光器和超辐射管研究进展Progress of GaN based laser diodes and superluminescene diodes刘建平中国科学院苏州纳米技术与纳米仿生研究所纳米器件研究部 研究员LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences

氮化物的范德华外延：基底结构、多性能控制和紫外光电器件应用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孙晓娟中科院长春光机所研究员SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

超宽禁带六方氮化硼二维原子晶体及其光电器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices张兴旺中国科学院半导体所研究员ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences