报告简介:基于深层瞬态光谱学的Al/Ti 4H-SiC肖特基结构缺陷研究 Investigation of Defect Levels of Al/Ti 4H-SiC Schottky Structures byDeep Level Transient Spectroscopy何亚伟 中国科学院半导体研究所 HE Yawei Institute of Semiconductors, Chinese Academy of Sciences
基于MOVPE技术生长GaN表面的原位相干X射线研究 In situ coherent x-ray studies of surface dynamics during OMVPE of GaN鞠光旭美国亚利桑那州立大学助理教授 GuangxuJUAssistant Research Professor of Arizona State University, USA