New technologies for efficient and integrated GaN power devicesElison MATIOLI瑞士洛桑联邦理工学院教授Elison MATIOLIProfessor of ?cole Polytechnique Fdrale de Lausanne, Swiss
Ultrawide Bandgap Ga2O3 Technologies - Benefits of Heterogeneous IntegrationMartin KUBALL英国布里斯托大学新兴技术系主任、教授Martin KUBALLRoyal Academy of Engineering Chair in Emerging Technologies at the University of Bristol, UK
