提高AlGaN基DUV-LED效率的薄p-GaN上的银基镂空反射电极Ag-based hollow reflective electrode on thin p-GaN layer for improving the light output efficiency of AlGaN-based deep-ultraviolet light-emitting diodes周玉刚南京大学电子科学与工程学院教授ZHOU YugangProfesor of School of Electronic Science and Engineering, Nanjing University

深紫外(DUV)和极深紫外(EUV)探测器在光刻、天文监测以及国防预警等诸多领域具有非常广阔的应用前景。在适用于DUV和EUV探测的所有