碳化硅生长和衬底建模以及基于MOVPE技术的氮化镓生长模拟 Modeling of SiC crystal growth and epitaxy and simulation of GaN metal Organic Vapor DepositionAndrey SMIRNOV俄罗斯STR Group, Inc.资深研发工程师 Andrey SMIRNOVSenior Research Engineer of STR Group, Inc., Russia
蓝宝石基B0.375GaN/B0.45GaN量子阱结构的激光二极管中n-p电极对于p型电导率的影响 The effect of n-p electrodes upon the p-type conductivity of B0.375GaN/B0.45GaN QW/QB edge emitting laser diode grown over sapphire substrateMussaab I. NIASS郑州大学 Mussaab I. NIASSZhengzhou University
报告简介：基于深层瞬态光谱学的Al/Ti 4H-SiC肖特基结构缺陷研究 Investigation of Defect Levels of Al/Ti 4H-SiC Schottky Structures byDeep Level Transient Spectroscopy何亚伟 中国科学院半导体研究所 HE Yawei Institute of Semiconductors, Chinese Academy of Sciences
