基于大失配外延的氮化物第三代半导体材料与器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大学理学部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

氮化铝单晶材料研究进展与应用展望Research Progress and Application Prospect of AlN Single Crystal Materials程红娟中国电子科技集团第四十六所新材料研发中心副主任CHENG HongjuanDeputy Director of New Materials Research and Development Center of CETC 46THInstitute

SiC功率器件制造工艺特点与核心装备创新进展Manufacturing process characteristics and key equipment development of SiC power devices巩小亮中国电子科技集团公司第四十八研究所 半导体装备研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation