氮化铝基半导体材料及器件的最新进展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基础研究实验室负责人、资深杰出研究员Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

超宽禁带半导体氧化镓和氮化铝特性研究Research on the Characteristics of Ultra-wide Bandgap Semiconductor GaO and AlN张道华深圳平湖实验室第四代半导体首席科学家、新加坡工程院院士ZHANG DaohuaChief Scientist of Fourth-generation Semiconductors of Shenzhen Pinghu Laboratory, Academician the Academy of Engineering, Singapore

异质集成氮化镓功率模块的量产制造工艺研究A Fabrication Process for Heterogeneous Integrated GaN Power Modules王文博甬江实验室研究员WANG WenboProfessor of Yongjiang Laboratory (Y-Lab)