氮化铝基半导体材料及器件的最新进展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基础研究实验室负责人、资深杰出研究员Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

使用MOCVD生长的QCL激光器Epitaxy of mid- infrared quantum cascade lasers fully by MOCVD房玉龙中电科十三所基础研究部主任FANG YulongHebei Semiconductor Institute