高功率宽禁带半导体射频器件研究进展Research Progress of High Power Wide Band-gap Semiconductor RF Devices张进成西安电子科技大学副校长、教授ZHANG JinchengVice PresidentProfessor of Xidian University

基于大失配外延的氮化物第三代半导体材料与器件Nitride Semiconductor Materials and Devices Based on Large Mismatch Epitaxy沈波北京大学理学部副主任、特聘教授SHEN Bo Deputy Deanand Distinguished Professorof Facultyof Science, Peking University

加快碳化硅芯片和电力电子器件的商业化发展Accelerating Commercialization of SiC Chips and Power ElectronicsVictor VELIADIS美国PowerAmerica执行董事兼CTO、ICSCRM 2024 大会主席、北卡罗莱纳州立大学教授、IEEE宽禁带功率半导体技术路线图委员会(ITRW)主席Victor VELIADISExecutiveDirector and CTO of PowerAmerica, Chair of ICSCRM 2024, Professor of North Carolina State Universityand Chair of ITRW ( IEEE Wide Ban

基于纳米压印全生态产业平台的微纳光学器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform罗刚材料科学姑苏实验室研究员、苏州新维度微纳科技有限公司创始人LUO GangProfessor of Gusu Lab, Founderof NDnano

面向SiC功率器件的装备与工艺解决方案NAURA Solutions for SiC Power Devices张轶铭北京北方华创微电子装备有限公司Zhang YimingBeijing NAURA Microelectronics Equipment Co.,Ltd

AlN基高压高频功率器件研究进展及挑战Research Progress and Application Prospect ofAlNSingle Crystal Materials周弘西安电子科技大学教授ZHOUHongProfessor at Xidian University

氮化铝基半导体材料及器件的最新进展Recent Progress on AlN-based Semiconductor Materials and Devices谷保芳孝日本NTT基础研究实验室负责人、资深杰出研究员Taniyasu YOSHITAKAGroup leader and Senior Distinguished Researcher of NTT Basic Research Laboratories, NTT Corporation

基于量产的氮化镓基光电子及功率器件的外延建模Modeling of Production-scale Epitaxy for Optical and Power GaN-based Devices LAMBRINAKIMARIIA苏州思体尔软件科技有限公司总经理LAMBRINAKI MARIIAGeneral Manager of Suzhou STR Software CO.,Ltd.

安世碳化硅，绿色出行和绿色能源发展的助推器王骏跃安世半导体中国区SiC战略及业务负责人

轨道交通SiC功率器件研究与应用进展刘国友株洲中车时代电气股份有限公司中车科学家、功率半导体与集成技术全国重点实验室副主任

面向的Ga2O3功率器件应用：封装、鲁棒性和多维器件Ga2O3Power Device Toward Application: Packaging, Robustness, and Multidimensional Devices张宇昊弗吉尼亚理工大学电力电子中心副教授ZHAGN YuhaoAssociate Professor of Center for Power Electronics Systems at Virginia Tech

氧化镓高导热异质集成射频器件High Thermal Conductivity Heterogeneous Integrated RF Devices for Ga₂O₃叶建东南京大学教授YE JiandongProfessor of Nanjing University

基于液态金属打印和飞秒激光照射的高性能原子薄Ga2O3气体传感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龙皇家墨尔本大学微纳研究院研究员XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University

氧化镓材料和电子器件的热特性Thermal Characteristics of Ga2O3Materials and Electronic Devices孙华锐哈尔滨工业大学（深圳）教授，理学院副院长SUN HuaruiProfessor of Harbin Institute of Technology, Shenzhen

氧化镓PECVD外延生长及光电信息感知器件研究Research on PECVD Epitaxial Growth of Gallium Oxide and the Photoelectric Information Sensing Devices李山南京邮电大学副教授、苏州镓和半导体研发总监LI ShanAssociate Professor, Nanjing University of Posts and Telecommunications, RD director of Suzhou GAO Semiconductor Co. Ltd.

47GHz-52GHz功率放大器芯片套片设计Design of 47GHz-52GHz Power Amplifier Chipset 杜鹏搏中国电科十三所正高级工程师、河北新华北集成电路有限公司副总经理DUPengboSenior Engineer of Hebei Semiconductor Institute, Deputy General Manager of Hebei New North China Integrated Circuit Co., Ltd

宽带GaN毫米波新器件研究Research on Broadband GaN Millimeter Wave Devices黄伟复旦大学教授HUANG WeiProfessor of Fudan University

5G移动通信用化合物器件研究Research on Compound Semiconductor Devices for 5G Mobile Communication钱峰南京国博电子股份有限公司副总经理QIAN FengDeputy General Manager of Nanjing Guobo Electronics Co., Ltd

35-5V单片集成GaN基DC-DC浮动降压转换器A 35-5 V Monolithic integrated GaN-based DC-DC Floating Buck Converter朱昱豪西交利物浦大学ZHU YuhaoXi'an Jiaotong-Liverpool University

p-GaN Gate HEMT器件阈值稳定性及其机理Study of the Physics of Vth Instability of p-GaN Gate HEMT陈匡黎电子科技大学博士ZHOU QiProfessor of University of Electronic Science and Technology of China